The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2026

Filed:

Nov. 11, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seungmin Lee, Seoul, KR;

Junhyoung Kim, Seoul, KR;

Jisu Shin, Suwon-si, KR;

Byungik Yoo, Suwon-si, KR;

Joon-Sung Lim, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 23/535 (2006.01); H10B 41/27 (2023.01); H10B 41/41 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 23/535 (2013.01); H10B 41/27 (2023.02); H10B 41/41 (2023.02); H10B 43/40 (2023.02);
Abstract

A three-dimensional semiconductor memory device and an electronic system including the same are discussed. The device may include: a stack structure including electrode layers and inter-electrode insulating layers that are alternately stacked on a substrate; one or more vertical semiconductor structures that extend into the stack structure and are adjacent to the substrate; one or more vertical conductive structures arranged in a first direction between adjacent ones of the one or more vertical semiconductor structures and extending into the stack structure and are adjacent to the substrate; and a conductive line portion on the stack structure that extends in the first direction to connect the one or more vertical conductive structures to each other. The conductive line portion and the vertical conductive structures may be connected to form a single unit.


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