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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12532471 B1

PDFFull Text
Date of Patent:
Jan. 20, 2026

Filed:

Oct. 11, 2022

Semiconductor devices and data storage systems including the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Subin Shin, Suwon-si, KR;

Sangwon Kim, Suwon-si, KR;

Jeeyong Kim, Suwon-si, KR;

Hyeonjoo Song, Suwon-si, KR;

Habin Lim, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Muir Patent Law, PLLC

Primary Examiner:

William B Partridge

Assistant Examiner:

David Paul Sedorook

Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 23/528 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/40 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 23/5283 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/40 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02);
Abstract

A semiconductor device includes a stack structure having gate electrodes and interlayer insulating layers, the stack structure having a cell region and a step region, and the gate electrodes extending in a first direction to have a step shape in the step region, channel structures through the stack structure in the cell region, separation structures through the stack structure and extending in the first direction, and support structures between the separation structures and through the stack structure in the step region. The step region includes first and second regions, the first region closer to the cell region in the first direction than the second region is, the support structures include first and second support structures through the stack structure in the first and second regions, respectively, a maximum width of the first support structure being greater than that of the second support structure.

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