The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
May. 31, 2023
Nanya Technology Corporation, New Taipei, TW;
Kuo Chung Hsu, Kaohsiung, TW;
En-Jui Li, New Taipei, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
A semiconductor memory device includes a substrate, a memory cell contact formed over the substrate, a bit line conductive structure formed over the substrate and a dielectric spacer located between the memory cell contact and the bit line conductive structure. The dielectric spacer includes an air gap having a rectangular cross-section, and the rectangular cross-section has a height H and a width W, wherein a H/W ratio is equal to or greater than 40.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile