The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Sep. 28, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Cheoljin Cho, Hwaseong-si, KR;
Hyunjun Kim, Gwacheon-si, KR;
Yukyung Shin, Suwon-si, KR;
Jongbeom Seo, Seoul, KR;
Changhwa Jung, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of fabricating a capacitor includes forming a lower electrode on a semiconductor substrate in a reaction space. A homogeneous oxide layer is formed on the lower electrode. A dielectric layer is formed on the homogeneous oxide layer. An upper electrode is formed on the dielectric layer. The forming of the homogeneous oxide layer includes performing a homogeneous oxide layer forming cycle at least one time. The homogeneous oxide layer forming cycle includes supplying an oxidizing agent, purging the oxidizing agent, and pumping-out the reaction space.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile