The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Feb. 22, 2023
Infineon Technologies Canada Inc., Ottawa, CA;
Nan Xing, Allen, TX (US);
Yinglai Xia, Plano, TX (US);
Yalong Li, Allen, TX (US);
Zhemin Zhang, Allen, TX (US);
Infineon Technologies Canada Inc., Ottawa, CA;
Abstract
Desaturation protection for a power field-effect transistor. The desaturation protection circuit includes the power field-effect transistor and a sense field-effect transistor that each have threshold voltages that are approximately the same. The sense field-effect transistor shares a gate terminal with the power field-effect transistor and shares a drain terminal with the power field-effect transistor. The circuit also includes a comparator having a first input terminal connected to a source terminal of the sense field-effect transistor, and having a second input terminal connected to a voltage source that is an offset voltage below a supply voltage. The circuit also includes a pull-up network configured to cause the output of the comparator to represent a state of whether the sense field-effect transistor is on or off, and can directly drive the turning off of the power transistor.