The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Nov. 21, 2022
Realtek Semiconductor Corp., Hsinchu, TW;
Ahmed Kord, San Diego, CA (US);
Chia-Liang (Leon) Lin, Fremont, CA (US);
REALTEK SEMICONDUCTOR CORP., Hsinchu, TW;
Abstract
A method operates to bias an RF receiver by incorporating a first NMOSFET as a common-source amplifier; incorporating a second NMOSFET as a cascode device stacked upon the first NMOSFET, injecting a reference current into a drain of a third NMOSFET; using a first operational amplifier to generate a first bias voltage to control a gate of the first NMOSFET, a gate of the third NMOSFET, and a gate of a fourth NMOSFET in accordance with a voltage difference between the drain of the third NMOSFET and a drain of the fourth NMOSFET; incorporating a fifth NMOSFET stacked upon the fourth NMOSFET; and using a second operational amplifier to generate a second bias voltage to control a gate of the second NMOSFET and a gate of the fifth NMOSFET in accordance with a voltage difference between a reference voltage and the drain of the fourth NMOSFET.