The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Sep. 25, 2020
Asahi Kasei Kabushiki Kaisha, Tokyo, JP;
National University Corporation Tokai National Higher Education and Research System, Nagoya, JP;
Abstract
A laser diode () includes an AlN single crystal substrate (), an n-type cladding layer () formed on the substrate and including a nitride semiconductor layer having n-type conductivity, a light-emitting layer () formed on the n-type cladding layer and including one or more quantum wells, a p-type cladding layer () formed on the light-emitting layer and including a nitride semiconductor layer having p-type conductivity, and a p-type contact layer () formed on the p-type cladding layer and including a nitride semiconductor that includes GaN. The p-type cladding layer includes a p-type longitudinal conduction layer () that includes AlGaN (0.3≤s≤1), has a composition gradient such that the Al composition s decreases with increased distance from the substrate, and has a film thickness of less than 0.5 μm, and a p-type transverse conduction layer () that includes AlGaN (0<t≤1).