The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Dec. 07, 2020
Hamamatsu Photonics K.k., Hamamatsu, JP;
Mitsuhito Mase, Hamamatsu, JP;
Jun Hiramitsu, Hamamatsu, JP;
Akihiro Shimada, Hamamatsu, JP;
Hiroaki Ishii, Hamamatsu, JP;
Toshinori Ito, Hamamatsu, JP;
Yuma Tanaka, Hamamatsu, JP;
HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;
Abstract
A ranging image sensor includes a semiconductor layer and an electrode layer. The semiconductor layer and the electrode layer form a plurality of pixels. Each of the plurality of pixels includes an avalanche multiplication region, a charge distribution region, a first charge transfer region, and a second charge transfer region in the semiconductor layer. Each of the plurality of pixels includes a photogate electrode, a first transfer gate electrode, and a second transfer gate electrode in the electrode layer. The avalanche multiplication region is continuous over the plurality of pixels or reaches a trench formed in the semiconductor layer so as to separate the plurality of pixels from each other.