The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Mar. 13, 2024
Wuhan University, Hubei, CN;
WUHAN UNIVERSITY, Hubei, CN;
Abstract
This invention relates to the field of power electronics, specifically addressing an IGBT (Insulated Gate Bipolar Transistor) collector current online detection device and method based on gate current. The detection method involves processing the IGBT gate drive waveform using a Miller plateau detection module to extract the Miller plateau region in the gate drive waveform. The IGBT gate current integration module extracts the voltage across the IGBT gate drive resistor, integrates the voltage waveform during the Miller plateau period, and uses the integration result to characterize the gate current during the Miller plateau. Three sets of integrator output voltages and collector currents under different load currents are measured, and a second-order polynomial fitting is performed internally in the DSP (Digital Signal Processor) to derive a function representing the collector current as a function of the integrator output voltage.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile