Low-k and tantalum nitride barrier recovery using a soak process

Abstract

Embodiments herein describe a method of manufacturing an interconnect structure. The method includes depositing a selective tungsten layer on a tungsten containing surface, the tungsten containing surface is disposed within a feature, wherein the feature includes one or more surfaces that comprise a dielectric material, and the depositing of the selective tungsten layer results in a residue forming on the dielectric material. The method also includes performing a reducing reaction via exposing the residue and dielectric material to an organosilane containing precursor soak, wherein the organosilane containing precursor reduces the residue. The method further includes forming a conformal layer over the dielectric material and the selective tungsten layer.