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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12527225 B1

PDFFull Text
Date of Patent:
Jan. 13, 2026

Filed:

Jun. 16, 2022

Method for manufacturing device comprising halide perovskite active layer, and power generation devices

Applicant:

Uif (University Industry Foundation), Yonsei University, Seoul, KR;

Inventors:

Yong Soo Cho, Seoul, KR;

Da Bin Kim, Seoul, KR;

Assignee:

UIF (UNIVERSITY INDUSTRY FOUNDATION), YONSEI UNIVERSITY, Seoul, KR;

Attorney:

Paratus Law Group, PLLC

Primary Examiner:

Emily P Pham

Assistant Examiner:

Monica undefined Mata

Int. Cl.
CPC ...
H01L 41/39 (2013.01); H01L 31/0236 (2006.01); H01L 31/032 (2006.01); H01L 31/103 (2006.01); H01L 41/08 (2006.01); H01L 41/113 (2006.01); H01L 41/18 (2006.01); H01L 41/314 (2013.01); H10F 30/221 (2025.01); H10F 77/12 (2025.01); H10F 77/70 (2025.01); H10K 71/40 (2023.01); H10K 85/50 (2023.01); H10N 30/00 (2023.01); H10N 30/074 (2023.01); H10N 30/093 (2023.01); H10N 30/30 (2023.01); H10N 30/85 (2023.01); H10K 30/20 (2023.01); H10K 30/50 (2023.01);
U.S. Cl.
CPC ...
H10N 30/852 (2023.02); H10F 30/221 (2025.01); H10F 77/12 (2025.01); H10F 77/707 (2025.01); H10K 71/40 (2023.02); H10K 85/50 (2023.02); H10N 30/074 (2023.02); H10N 30/093 (2023.02); H10N 30/304 (2023.02); H10N 30/706 (2024.05); H10K 30/20 (2023.02); H10K 30/50 (2023.02);
Abstract

A power generation device manufacturing method and a power generation device are proposed. In one embodiment, the method includes (a) forming a halide perovskite active layer on a flexible substrate bent by a stress applied thereto and (b) releasing the stress applied to the substrate on which the halide perovskite active layer is formed, thereby unfolding the bent substrate. By applying a strain to the active layer of the power generation device and controlling the same, using the method described above, it is possible to improve the performance of the power generation device without changing the composition of the active layer or the configuration of the device.

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