The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Aug. 01, 2022
Applicant:

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Guangdong, CN;

Inventors:

Zhiqing Shi, Guangdong, CN;

Jinyang Zhao, Guangdong, CN;

Lixuan Chen, Guangdong, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10K 50/115 (2023.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01); C09K 11/02 (2006.01); H10K 59/12 (2023.01); H10K 71/12 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10K 50/115 (2023.02); C09K 11/025 (2013.01); H10K 71/12 (2023.02); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); H10K 59/12 (2023.02); H10K 2102/311 (2023.02);
Abstract

A quantum dot substrate, a method for preparing the same, and a display device thereof. The quantum dot substrate includes a quantum dot film. The quantum dot film includes a plurality of quantum dots and a plurality of first nanoparticles dispersed among the plurality of quantum dots. A particle size of the plurality of first nanoparticles ranges from 2 nanometers (nm) to 50 nm. In the present application, a self-absorption phenomenon of the plurality of quantum dots is reduced and luminous efficiency of the plurality of quantum dots is enhanced through arranging the plurality of first nanoparticles with particle sizes ranging from 2 nm to 50 nm among the plurality of quantum dots.


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