The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Sep. 10, 2019
Applicant:
Crayonano As, Trondheim, NO;
Inventors:
Assignee:
SQUIDLED SAS, Paris, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/854 (2025.01); H10F 77/124 (2025.01); H10F 77/40 (2025.01); H10F 77/70 (2025.01); H10H 20/814 (2025.01); H10H 20/819 (2025.01); H10H 20/825 (2025.01);
U.S. Cl.
CPC ...
H10H 20/854 (2025.01); H10F 77/1246 (2025.01); H10F 77/413 (2025.01); H10F 77/703 (2025.01); H10H 20/814 (2025.01); H10H 20/819 (2025.01); H10H 20/825 (2025.01);
Abstract
The invention relates to a semiconductor device, e.g. for the emission or absorption of light, preferably in the deep ultraviolet (DUV) range. The device, e.g. a resonant cavity light emitting diode (RCLED) or a laser diode, is formed from: a substrate layer (), preferably comprising a distributed Bragg reflector (DBR); a graphitic layer (); and at least one semiconductor structure (), preferably a wire or a pyramid, grown on the graphitic layer, with or without the use of a mask layer (). The semiconductor structure is constructed from at least one III-V semiconductor n-type doped region () and a hexagonal boron-nitride (hBN) region (), preferably being p-type doped hBN.