The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Dec. 21, 2021
Nichia Corporation, Anan, JP;
NICHIA CORPORATION, Anan, JP;
Abstract
A nitride semiconductor light emitting element includes: an n-side nitride semiconductor layer; a p-side nitride semiconductor layer; and an active layer disposed between the n-side nitride semiconductor layer and the p-side nitride semiconductor layer and comprising a plurality of stacks, each comprising a well layer and a barrier layer. The well layers include, successively from the n-side nitride semiconductor layer side, a first well layer, a second well layer, and a third well layer that is positioned closest to the p-side nitride semiconductor layer among the well layers. A thickness of the second well layer is greater than a thickness of the first well layer. A thickness of the third well layer is greater than the thickness of the second well layer. Among the barrier layers, the first barrier layer, which is positioned between the third well layer and the p-side nitride semiconductor layer, is doped with a p-type impurity.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile