The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Jan. 10, 2023
Aeluma, Inc., Goleta, CA (US);
Jonathan Klamkin, Goleta, CA (US);
Bowen Song, Goleta, CA (US);
Aeluma, Inc., Goleta, CA (US);
Abstract
A sensor device and method of fabrication therefor. The method includes providing a partially completed semiconductor substrate having the following stacked materials: a silicon substrate, a buffer material, an n-type semiconductor material, an unintentionally doped (UID) optically absorptive material, a UID optically transparent semiconductor material, and a native insulating material. The substrate is sealed in a predetermined environment within a first carrier device, and then transferred from a first geographic location to a second geographic location. The substrate is then transferred to a second carrier device and cleaned. A dielectric material is formed overlying the substrate and patterned to form a p-type contact region and an n-type contact region. A p-type semiconductor region is formed via the p-type contact region, a p-type metal contact is formed overlying the p-type contact region, and an n-type metal contact is formed overlying the n-type contact region to form a common n-type electrode.