The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Apr. 15, 2024
Applicant:

Zhejiang Jinko Solar Co., Ltd., Zhejiang, CN;

Inventors:

Huimin Li, Zhejiang, CN;

Menglei Xu, Zhejiang, CN;

Jie Yang, Zhejiang, CN;

Xinyu Zhang, Zhejiang, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 77/14 (2025.01); H10F 10/14 (2025.01); H10F 19/80 (2025.01);
U.S. Cl.
CPC ...
H10F 77/147 (2025.01); H10F 10/14 (2025.01); H10F 19/80 (2025.01);
Abstract

Embodiments of the present disclosure provide a solar cell and a photovoltaic module. The solar cell includes: a substrate having a front surface and a rear surface, a first doped polycrystalline silicon layer doped with N-type dopant ions and disposed over the front surface or over the rear surface, and a second doped polycrystalline silicon layer doped with P-type dopant ions and disposed over the rear surface. A surface of the first doped polycrystalline silicon layer away from the substrate has a plurality of first protrusion structures. A surface of the second doped polycrystalline silicon layer away from the substrate has a plurality of second protrusion structures. An average thickness of the first protrusion structures is greater than an average thickness of the second protrusion structures, and a thickness of the first doped polycrystalline silicon layer is not greater than a thickness of the second doped polycrystalline silicon layer.


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