Method of fabricating si photonics chip with integrated high speed ge photo detector working for entire c- and l-band

Abstract

A receiver for receiving optical signals transmitted over a communications network includes a silicon photonics substrate including multiple regions with respectively different doping, an epitaxial germanium layer extending at least partially over at least two or more of regions with different doping, and at least one of a tensile stressor component and a compressive stressor component in contact with the epitaxial germanium layer. The tensile stressor component and the compressive stressor component are respectively configured to mechanically strain the epitaxial germanium layer to modify an optical signal absorption attribute of the epitaxial germanium layer. The receiver includes a receive circuit including at least one electrode component in electrical contact with the epitaxial germanium layer. The receive circuit is configured to generate an electrical output in response to an optical signal received from a network interface of the communications network by the epitaxial germanium layer.