The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Mar. 01, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Cheol Kim, Hwaseong-si, KR;
Jongchul Park, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor device includes a substrate including a first active pattern and a second active pattern, a gate electrode including a first gate electrode on the first active pattern and a second gate electrode on the second active pattern, a gate cutting pattern between the first and second gate electrodes, gate spacers on opposing side surfaces of the gate electrode, and a gate capping pattern on top surfaces of the gate electrode, the gate cutting pattern, and the gate spacers and extending in the first direction. The gate cutting pattern includes a first and second side surfaces, which are opposite to each other in a second direction crossing the first direction. The first and side surfaces are in contact with respective ones of the gate spacers, and the top surface of the gate cutting pattern is closer to the substrate than the top surfaces of the pair of gate spacers.