Nitride-based semiconductor circuit and method for manufacturing the same

Abstract

A nitride-based semiconductor circuit including a substrate structure, a nitride-based heterostructure, connectors, and connecting vias is provided. The substrate structure includes a first type semiconductor substrate, and a second type semiconductor substrate. The second type semiconductor substrate is embedded in a region of the first type semiconductor substrate. The first type semiconductor substrate has first dopants, and the second type semiconductor substrate has second dopants to form a pn junction between the first type semiconductor substrate and the second type semiconductor substrate. The nitride-based heterostructure is disposed on the substrate structure. The connectors are disposed on the nitride-based heterostructure. The connecting vias include a first interconnection and a second interconnection. The first interconnection electrically connects the first region of the first type semiconductor substrate to one of the connectors. The second interconnection electrically connects the second type semiconductor substrate to another one of the connectors.