The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Feb. 28, 2022
Applicants:
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Shunsuke Asaba, Himeji Hyogo, JP;
Makoto Mizukami, Ibo Hyogo, JP;
Assignees:
Toshiba Electronic Devices & Storage Corporation, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/832 (2025.01); H01L 21/02 (2006.01); H10D 30/66 (2025.01); H10D 64/62 (2025.01); H10D 64/64 (2025.01);
U.S. Cl.
CPC ...
H10D 62/8325 (2025.01); H01L 21/02529 (2013.01); H10D 30/66 (2025.01); H10D 64/62 (2025.01); H10D 64/64 (2025.01);
Abstract
A semiconductor device of embodiments includes: an electrode containing titanium (Ti); a silicon carbide layer; a first region provided between the silicon carbide layer and the electrode, containing silicon (Si) and oxygen (O), and having a thickness equal to or more than 2 nm and equal to or less than 10 nm; and a second region provided between the first region and the electrode and containing titanium (Ti) and silicon (Si).