The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Oct. 06, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sug Hyun Sung, Yongin-si, KR;

Jung Gun You, Ansan-si, KR;

Mi Ri Joung, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/13 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01); H10D 64/27 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 62/151 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 64/01 (2025.01); H10D 64/017 (2025.01); H10D 64/018 (2025.01); H10D 64/021 (2025.01); H10D 64/258 (2025.01); H10D 64/516 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/0181 (2025.01); H10D 84/0184 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01);
Abstract

There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor device comprising an active pattern including, a lower pattern extending in a first direction, and a plurality of sheet patterns spaced apart from the lower pattern in a second direction perpendicular to the first direction, wherein the lower pattern includes a semiconductor material, a plurality of gate structures on the lower pattern and spaced apart from each other in the first direction, wherein each of the plurality of gate structures includes a gate electrode and a gate insulating film, a source/drain recess between adjacent ones of the gate structures, wherein a bottom of the source/drain recess is in the lower pattern, a bottom insulating liner in the bottom of the source/drain recess, and a source/drain pattern in the source/drain recess and on top of the bottom insulating liner.


Find Patent Forward Citations

Quick Actions:

Sung, Sug. (2026). Semiconductor devices and methods for manufacturing the same (U.S. Patent No. 12527051). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12527051

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