The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
May. 25, 2023
Applicant:
E Ink Holdings Inc., Hsinchu, TW;
Inventors:
Ming-Kai Chuang, Hsinchu, TW;
Lih-Hsiung Chan, Hsinchu, TW;
Assignee:
E Ink Holdings Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6729 (2025.01); H10D 30/673 (2025.01); H10D 30/6746 (2025.01);
Abstract
A thin film transistor structure includes a gate electrode, a gate insulation layer, a first amorphous silicon layer, a source/drain electrode, and a second amorphous silicon layer. The gate insulation layer is located on the gate electrode. The first amorphous silicon layer is located on the gate insulation layer. The source/drain electrode is located on the first amorphous silicon layer. The second amorphous silicon layer is located in the gate insulation layer.