The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Apr. 28, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sanghoon Uhm, Suwon-si, KR;
Minhee Cho, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes bit lines, gate electrodes, a gate insulation pattern and a channel structure on a substrate. Each of the bit lines extends in a first direction, and the bit lines may be spaced apart from each other in a second direction. The gate electrodes are spaced apart from each other in the first direction, and each of the gate electrodes extends in the second direction. For each of the gate electrodes, a gate insulation pattern is formed on a sidewall in the first direction of the gate electrode, and a channel structure is formed on a sidewall in the first direction of the gate insulation pattern. The channel structure includes a first amorphous channel including an amorphous oxide semiconductor and a first crystalline channel including a crystalline oxide semiconductor and contacting an upper surface of the first amorphous channel.