The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Sep. 07, 2021
Innoscience (Suzhou) Technology Co., Ltd., Suzhou, CN;
Chuan He, Suzhou, CN;
Xiaoqing Pu, Suzhou, CN;
Ronghui Hao, Suzhou, CN;
Jinhan Zhang, Suzhou, CN;
King Yuen Wong, Suzhou, CN;
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou, CN;
Abstract
A nitride-based semiconductor device includes a first and a second nitride-based semiconductor layers, a doped III-V semiconductor layer, a gate, a source electrode, and a drain electrode. The doped III-V semiconductor layer is disposed over the second nitride-based semiconductor layer and has opposite first sidewalls which recessed inward toward a body of the doped III-V semiconductor layer between the sidewalls to make a curved profile located at a bottom of the doped III-V semiconductor layer. The gate electrode is disposed above the doped III-V semiconductor layer. The source electrode and the drain electrode are disposed above the second nitride-based semiconductor layer. The gate electrode is located between the source and drain electrodes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile