The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Apr. 21, 2023
Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventors:

Seiji Noguchi, Matsumoto, JP;

Ryutaro Hamasaki, Matsumoto, JP;

Daisuke Ozaki, Okaya, JP;

Yosuke Sakurai, Azumino, JP;

Takuya Yamada, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 12/00 (2025.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 64/23 (2025.01);
U.S. Cl.
CPC ...
H10D 12/481 (2025.01); H10D 30/0295 (2025.01); H10D 62/126 (2025.01); H10D 62/133 (2025.01); H10D 62/137 (2025.01); H10D 64/231 (2025.01);
Abstract

Provided is a semiconductor device including: a first trench contact portion provided to an inside of a contact region; a second trench contact portion provided to an inside of an emitter region; a first plug portion of a second conductivity type, which is provided in contact with a lower end of the first trench contact portion and has a higher concentration than a base region; and a second plug portion of a second conductivity type, which is provided in contact with a lower end of the second trench contact portion, is provided to a position closer to a lower surface than the first plug portion, and has a higher concentration than the base region.


Find Patent Forward Citations

Loading…