The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Jul. 03, 2023
International Business Machines Corporation, Armonk, NY (US);
Ghazi Sarwat Syed, Kilchberg, CH;
Timothy Mathew Philip, Albany, NY (US);
Vara Sudananda Prasad Jonnalagadda, Wallisellen, CH;
Abu Sebastian, Adliswil, CH;
Matthew Joseph Brightsky, Armonk, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Semiconductor devices and methods for forming the semiconductor devices are described. A semiconductor device can include a first electrode, a storage node, a second electrode and a film layer. The storage node can include phase change material deposited on top of the first electrode. The film layer can be deposited on top of the storage node and connected in a closed circuit. A voltage difference among the first electrode, the second electrode and the film layer can dictate a threshold voltage that triggers a phase change of the phase change material. An amorphous volume in the storage node can be dependent on a structural arrangement of the first electrode, the second electrode and the film layer with respect to the storage node.