The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Mar. 04, 2024
SK Hynix Inc., Icheon-si, KR;
Ki Chang Jeong, Icheon-si, KR;
Nam Kuk Kim, Icheon-si, KR;
SK hynix Inc., Icheon-si Gyeonggi-do, KR;
Abstract
Provided is a method of fabricating the semiconductor memory device. A stack layer, which includes sacrificial layers and first insulating interlayers alternately stacked, is formed. The sacrificial layers are positioned at an uppermost layer of the stack layer. A plurality of channel holes are formed through the stack layer. A first channel pillar is formed in each of the channel holes. A mold layer is formed on the stack layer with the first channel pillar. The mold layer includes a mold hole configured to partially expose the first channel pillar. A second channel pillar is formed in the mold hole. The mold layer and the sacrificial layer at the uppermost layer of the stack layer are then removed.