The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Jan. 17, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dong-Sik Park, Suwon-si, KR;

Sooho Shin, Suwon-si, KR;

Cheolho Baek, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/033 (2023.02); H10B 12/315 (2023.02); H10B 12/50 (2023.02);
Abstract

A semiconductor device may include a substrate including a cell array region, a data storage structure provided on the cell array region of the substrate, the data storage structure including a bottom electrode, a top electrode on the bottom electrode, and a dielectric layer interposed between the bottom electrode and the top electrode, a blocking layer provided on a top surface of the top electrode, a lower interlayer insulating layer provided on the blocking layer, and a lower contact penetrating the lower interlayer insulating layer and electrically connected to the top electrode. At least a portion of a side surface of the lower contact may contact the blocking layer.


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