The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Mar. 16, 2023
Applicant:

Skyworks Solutions, Inc., Irvine, CA (US);

Inventors:

Kun Chen, Thousand Oaks, CA (US);

Taesong Hwang, Camarillo, CA (US);

Haibo Cao, Newbury Park, CA (US);

Yu-Jui Lin, Westlake Village, CA (US);

Min-Chung Vincent Ho, Newbury Park, CA (US);

Aleksey A Lyalin, Moorpark, CA (US);

Assignee:

Skyworks Solutions, Inc., Irvine, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/24 (2006.01); H03F 1/02 (2006.01); H03F 1/48 (2006.01); H03F 1/56 (2006.01); H03F 3/213 (2006.01); H04B 1/04 (2006.01);
U.S. Cl.
CPC ...
H03F 3/245 (2013.01); H03F 1/0216 (2013.01); H03F 1/483 (2013.01); H03F 1/56 (2013.01); H03F 3/213 (2013.01); H04B 1/0458 (2013.01); H03F 2200/09 (2013.01); H03F 2200/387 (2013.01); H03F 2200/451 (2013.01); H04B 2001/0408 (2013.01);
Abstract

Apparatus and methods for power amplifiers with broadband matching networks are disclosed. In certain embodiments, a mobile device includes a transceiver that generates a radio frequency input signal, and a front-end system including a compound semiconductor die and a silicon switch die. The compound semiconductor die includes a power amplifier including one or more power amplifier stages that amplify the radio frequency input signal to generate a radio frequency output signal. The silicon switch die includes a band selection switch that receives the radio frequency output signal. The compound semiconductor die and the silicon switch die each include at least one controllable impedance for providing a bandwidth adjustment to the power amplifier.


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