The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Dec. 20, 2019
Applicant:

Nlight, Inc., Camas, WA (US);

Inventors:

Manoj Kanskar, Camas, WA (US);

Zhigang Chen, Camas, WA (US);

Assignee:

nLIGHT, Inc., Camas, WA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/042 (2006.01); H01S 5/20 (2006.01); H01S 5/34 (2006.01);
U.S. Cl.
CPC ...
H01S 5/2036 (2013.01); H01S 5/04256 (2019.08); H01S 5/3402 (2013.01); H01S 5/04254 (2019.08); H01S 2301/176 (2013.01);
Abstract

A laser diode, comprising a transverse waveguide comprising an active layer between an n-type semiconductor layer and a p-type semiconductor layer wherein the transverse waveguide is bounded by a lower index n-cladding layer on an n-side of the transverse waveguide and a lower index p-cladding layer on a p-side of the transverse waveguide a cavity that is orthogonal to the transverse waveguide, wherein the cavity is bounded in a longitudinal direction at a first end by a high reflector (HR) facet and at a second end by a partial reflector (PR) facet, and a first contact layer electrically coupled to the waveguide and configured to vary an amount of current injected into the waveguide in the longitudinal direction so as to inject more current near the HR facet than at the PR facet.


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