The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Dec. 18, 2020
Applicant:

Stanley Electric Co., Ltd., Tokyo, JP;

Inventor:

Masaru Kuramoto, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/30 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18369 (2013.01); H01S 5/18347 (2013.01); H01S 5/3013 (2013.01);
Abstract

A vertical cavity light-emitting element includes a substrate, a first multilayer reflector, a semiconductor structure layer, an electrode layer, and a second multilayer reflector. The semiconductor structure layer includes a first semiconductor layer of a first conductivity type on the first multilayer reflector, a light-emitting layer on the first semiconductor layer, and a second semiconductor layer of a second conductivity type on the light-emitting layer. The electrode layer is on an upper surface of the semiconductor structure layer and is electrically in contact with the second semiconductor layer in one region of the upper surface. The second multilayer reflector covers the one region on the electrode layer and constitutes a resonator with the first multilayer reflector. The semiconductor structure layer has one recessed structure including one or a plurality of recessed portions passing through the light-emitting from the upper surface in a region surrounding the one region.


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