The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Jul. 21, 2022
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Shin Chaki, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 23/66 (2006.01); H10D 1/60 (2025.01); H10D 1/68 (2025.01); H10D 84/00 (2025.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H10D 1/692 (2025.01); H10D 84/212 (2025.01); H01L 2223/6611 (2013.01); H01L 2223/6672 (2013.01); H01L 2223/6683 (2013.01); H01L 2223/6694 (2013.01); H03B 2200/0028 (2013.01);
Abstract
A semiconductor device includes: an MMIC having a DC pad; a bias substrate; a plurality of MIM capacitors mounted on the bias substrate; a plurality of pads provided on the bias substrate and respectively connected to overlying electrodes of the MIM capacitors; and a wire connecting the DC pad to any one of the plurality of pads, wherein the plurality of pads are arranged between the DC pad and the plurality of MIM capacitors in a planar view, and extend parallel to a row of the plurality of MIM capacitors laterally arranged side by side.