The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Apr. 28, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jisu Yu, Seoul, KR;

Youngsook Do, Seoul, KR;

Eunsung Seo, Seoul, KR;

Wooseok Kim, Suwon-si, KR;

Wonsik Yu, Anyang-si, KR;

Chanyoung Jeong, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); H01L 23/5223 (2013.01);
Abstract

A semiconductor device includes: a standard cell array including a plurality of standard cells, each of the plurality of standard cells; a plurality of power supply lines configured to provide a power supply voltage and extending in a first direction; a capacitor structure including electrode structures included in each of a plurality of dielectric layers formed on the standard cell array, the capacitor structure having vias connecting the electrode structures; and contacts electrically connecting the capacitor structure and the standard cell array to each other. Each of the plurality of standard cells provides a unit capacitor circuit having capacitance that is based on a connection structure of active regions and gates of first and second transistors thereof.


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