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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12525462 B1

PDFFull Text
Date of Patent:
Jan. 13, 2026

Filed:

Feb. 24, 2022

Method for etching a three-dimensional dielectric layer

Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Nicolas Posseme, Grenoble, FR;

Valentin Bacquie, Grenoble, FR;

Assignee:

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Jeff W Natalini

Assistant Examiner:

Rose undefined Keagy

Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01); H10D 30/01 (2025.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/0214 (2013.01); H01L 21/02164 (2013.01); H01L 21/02238 (2013.01); H01L 21/02252 (2013.01); H10D 30/024 (2025.01); H01L 21/31144 (2013.01);
Abstract

A method for etching a dielectric layer covering a top and a flank of a three-dimensional structure, this method including a first etching of the dielectric layer, including a first fluorine based compound, a second compound taken from SiwCl(2w+2) and SiwF(2w+2), oxygen, this first etching being carried out to form a first protective layer on the top and form a second protective layer on the dielectric layer, a second etching configured to remove the second protective layer while retaining a portion of the first protective layer, the first and second etchings being repeated until removing the dielectric layer located on the flank of the structure. The second etching can be carried out by hydrogen-based plasma.

Find Patent Forward Citations

Posseme, Nicolas. (2026). Method for etching a three-dimensional dielectric layer (U.S. Patent No. 12525462). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12525462

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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