The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Nov. 28, 2022
Applicant:

Iucf-hyu (Industry-university Cooperation Foundation Hanyang University), Seoul, KR;

Inventors:

Chin-Wook Chung, Seoul, KR;

Jiwon Jung, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/32136 (2013.01); H01J 37/32146 (2013.01); H01J 37/32357 (2013.01); H01J 37/32422 (2013.01); H01J 37/32449 (2013.01); H01J 2237/3341 (2013.01);
Abstract

Provided is an etching method. The etching method includes loading a substrate into a process chamber, wherein the process chamber includes a first chamber part and a second chamber part, and the substrate is loaded into the second chamber part, supplying high-density gas plasma to the first chamber part, supplying ultra-low electron temperature plasma to the second chamber part using at least a portion of the high-density gas plasma, adsorbing radicals of the ultra-low electron temperature plasma to a surface of the substrate, and applying a bias to the substrate to accelerate at least one of ions or electrons of the ultra-low electron temperature plasma so as to collide with the substrate.


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