The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Mar. 14, 2024
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dongho Shin, Suwon-si, KR;

Kangyoon Lee, Seoul, KR;

Seonkyoo Lee, Suwon-si, KR;

Junha Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); G11C 7/22 (2006.01);
U.S. Cl.
CPC ...
G11C 7/22 (2013.01); G11C 2207/2254 (2013.01);
Abstract

A method of calibrating impedance of a memory device including a data transmitter includes: outputting a comparison signal by comparing a power supply voltage and a reference voltage, the power supply voltage being supplied to the data transmitter when the data transmitter is driven; storing a voltage level of the reference voltage when the comparison signal changes logical state; adjusting the reference voltage based on the comparison signal such that the voltage level of the reference voltage increases or decreases; and calibrating an output impedance of the memory device based on a digital code corresponding to an average reference voltage level, the average reference voltage level being obtained by averaging a prescribed number of voltage levels of the reference voltage stored as a result of repeatedly outputting the comparison signal, storing the voltage level of the reference voltage, and adjusting the reference voltage.


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