The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Aug. 28, 2023
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventor:

Jae Woong Kim, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/04 (2006.01); G06F 3/06 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G06F 3/064 (2013.01); G06F 3/061 (2013.01); G06F 3/0679 (2013.01); G11C 11/5628 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/3459 (2013.01);
Abstract

A semiconductor memory device, and a method of operation, includes a memory block including a plurality of memory strings. The semiconductor memory device also includes a peripheral circuit performing a main program operation on drain select transistors included in the memory block, and a test program operation and a threshold voltage monitoring operation on memory cells included in the memory block. The semiconductor memory device further includes control logic controlling the peripheral circuit to detect a disturb susceptible memory string, among the plurality of memory strings, based on a result of performing the threshold voltage monitoring operation on the memory cells, and to perform an additional program operation on a drain select transistor included in the disturb susceptible memory string.


Find Patent Forward Citations

Kim, Jae. (2026). Semiconductor memory device and method for programming select transistors (U.S. Patent No. 12524173). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12524173

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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