The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Jul. 01, 2022
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Yu-Chen Huang, New Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/38 (2006.01); G03F 7/039 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/38 (2013.01); G03F 7/039 (2013.01); H01L 21/0274 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. A portion of the photoresist layer is exposed, using a mask, to a radiation. The photoresist layer is treated, using a basic gas. The photoresist layer is developed to form a patterned photoresist layer over the substrate.
Quick Actions:
Huang, Yu-Chen. (2026). Method of manufacturing semiconductor device (U.S. Patent No. 12523936). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12523936
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile