The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Sep. 21, 2023
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Placido De Vita, Acicatena, IT;

Salvatore Abbisso, Augusta, IT;

Giovanni Luca Torrisi, Aci Catena, IT;

Antonio Davide Leone, Siziano, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 17/16 (2006.01); G01R 17/04 (2006.01); G01R 19/00 (2006.01); G01R 19/165 (2006.01); G01R 19/257 (2006.01); G05F 1/46 (2006.01);
U.S. Cl.
CPC ...
G01R 17/16 (2013.01); G01R 17/04 (2013.01); G01R 19/0023 (2013.01); G01R 19/16523 (2013.01); G01R 19/257 (2013.01); G05F 1/461 (2013.01);
Abstract

A pre-driving stage drives one or more Field Effect Transistors in a power stage driving a load. A method for measuring current flowing in the Field Effect Transistors includes: measuring drain to source voltages of the one or more Field Effect Transistor; and measuring an operating temperature of the one or more Field Effect Transistor. The current flowing in the Field Effect Transistors is measured by: calculating the respective on drain to source resistance at the operating temperature as a function of the measured operating temperature and obtaining the current value as a ratio of the respective measured drain to source voltage over the calculated drain to source resistance at the operating temperature.


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