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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12522680 B1

PDFFull Text
Date of Patent:
Jan. 13, 2026

Filed:

Dec. 22, 2023

Perovskite optoelectronic devices and method for manufacturing the same

Applicant:

SN Display Co., Ltd., Seoul, KR;

Inventors:

Tae-Woo Lee, Pohang-si, KR;

Sanghyuk Im, Hwaseong-si, KR;

Himchan Cho, Daegu, KR;

Young-Hoon Kim, Daejeon, KR;

Assignee:

SN DISPLAY CO., LTD., , KR;

Attorney:

Renaissance IP Law Group LLP

Primary Examiner:

Alia Sabur

Int. Cl.
CPC ...
C09K 11/00 (2006.01); C08F 214/26 (2006.01); C09D 127/18 (2006.01); C09K 11/02 (2006.01); C09K 11/06 (2006.01); C09K 11/66 (2006.01); H01B 1/12 (2006.01); H01G 9/20 (2006.01); H01L 21/02 (2006.01); H10F 71/00 (2025.01); H10F 77/12 (2025.01); H10F 77/14 (2025.01); H10K 30/86 (2023.01); H10K 50/11 (2023.01); H10K 85/10 (2023.01); H10K 85/30 (2023.01); H10K 85/50 (2023.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); H10K 30/30 (2023.01); H10K 30/50 (2023.01); H10K 50/18 (2023.01); H10K 85/60 (2023.01);
U.S. Cl.
CPC ...
C08F 214/262 (2013.01); C09D 127/18 (2013.01); C09K 11/00 (2013.01); C09K 11/025 (2013.01); C09K 11/06 (2013.01); C09K 11/664 (2013.01); C09K 11/665 (2013.01); H01B 1/125 (2013.01); H01B 1/127 (2013.01); H01G 9/2009 (2013.01); H01L 21/02197 (2013.01); H10F 71/00 (2025.01); H10F 77/12 (2025.01); H10F 77/1433 (2025.01); H10K 30/86 (2023.02); H10K 50/11 (2023.02); H10K 85/111 (2023.02); H10K 85/141 (2023.02); H10K 85/30 (2023.02); H10K 85/50 (2023.02); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C09K 2211/18 (2013.01); C09K 2211/181 (2013.01); C09K 2211/188 (2013.01); H10K 30/353 (2023.02); H10K 30/50 (2023.02); H10K 50/18 (2023.02); H10K 85/60 (2023.02); Y02E 10/549 (2013.01);
Abstract

Provided are a perovskite optoelectronic device containing an exciton buffer layer, and a method for manufacturing the same. The optoelectronic device of the present inventive concept comprises: an exciton buffer layer in which a first electrode, a conductive layer disposed on the first electrode and comprising a conductive material, and a surface buffer layer containing fluorine-based material having lower surface energy than the conductive material are sequentially deposited; a photoactive layer disposed on the exciton buffer layer and containing a perovskite photoactive layer; and a second electrode disposed on the photoactive layer. Accordingly, a perovskite is formed with a combined FCC and BSS crystal structure in a nanoparticle photoactive layer. The present inventive concept can also form a lamellar or layered structure in which an organic plane and an inorganic plane are alternatively deposited; and an exciton can be bound by the inorganic plane, thereby being capable of expressing high color purity.

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