The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Sep. 27, 2023
Yokogawa Electric Corporation, Tokyo, JP;
Nobuhiko Kanbara, Tokyo, JP;
Takashi Aoto, Tokyo, JP;
Yokogawa Electric Corporation, Tokyo, JP;
Abstract
Provided is a variable conductivity film exhibiting a large change in conductivity so as to facilitate movement or sorting of micro-materials. Silicon semiconductor layers disposed between a first electrode and a second electrode include: a first silicon layer of a first conductivity type with a first impurity concentration; a second silicon layer of a second conductivity type different from the first conductivity type, contacting the first silicon layer and having a second impurity concentration smaller than the first impurity concentration; and a third silicon layer of the first conductivity type contacting the second silicon layer and having a third impurity concentration larger than the second impurity concentration. The first silicon layer and the second silicon layer form a first photodiode having a first polarity, and the second silicon layer and the third silicon layer form a second photodiode having a second polarity and being connected in series to the first photodiode.