The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Jun. 20, 2023
Applicants:

University of Maryland, College Park, College Park, MD (US);

Regents of the University of Minnesota, Minneapolis, MN (US);

Inventors:

Cheng Gong, Potomac, MD (US);

Tony Low, Woodbury, MN (US);

Jian-Ping Wang, Shoreview, MN (US);

Assignees:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/20 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/25 (2023.02); H10N 70/021 (2023.02); H10N 70/823 (2023.02); H10N 70/841 (2023.02); H10N 70/8822 (2023.02); H10N 70/8825 (2023.02); H10N 70/8845 (2023.02);
Abstract

Disclosed are energy efficient ferroelectric devices and methods for making such devices. For example, a ferroelectric device may be a ferroelectric tunneling junction device that includes a graphene layer on a substrate. A tunneling layer may be disposed on a portion of the graphene layer. The tunneling layer may be a ferroelectric material. A metal electrical contact layer may be disposed over the tunneling layer and the graphene layer. Additionally, some embodiments may have an additional monolayer disposed between the tunneling layer and graphene layer. By specific engineering of such layers, tunneling electroresistance performance may be substantially improved.


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