The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Feb. 23, 2022
Applicants:

Beijing Boe Display Technology Co., Ltd., Beijing, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Ning Cong, Beijing, CN;

Can Zhang, Beijing, CN;

Minghua Xuan, Beijing, CN;

Jinfei Niu, Beijing, CN;

Can Wang, Beijing, CN;

Wei Li, Beijing, CN;

Jingjing Zhang, Beijing, CN;

Xiaochuan Chen, Beijing, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10K 59/121 (2023.01); H10K 59/12 (2023.01);
U.S. Cl.
CPC ...
H10K 59/1216 (2023.02); H10K 59/1201 (2023.02);
Abstract

A display substrate, a preparation method therefor, and a display device. A display substrate includes a plurality of conductive layers disposed on a silicon-based substrate (), a conductive layer includes a first sub-electrode plate () and a second sub-electrode plate (), the first sub-electrode plate () and the second sub-electrode plate () form a first storage capacitor of a MOM capacitance structure, and another conductive layer comprises a third sub-electrode plate () and a fourth sub-electrode plate (), the third sub-electrode plate () and the fourth sub-electrode plate () form a second storage capacitor of a MOM capacitance structure; the first sub-electrode plate () and the fourth sub-electrode plate () constitute a third storage capacitor of a MIM capacitance structure, and/or the second sub-electrode plate () and the third sub-electrode plate () constitute a fourth storage capacitor of a MIM capacitance structure.


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