The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Oct. 19, 2022
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Jong Jin Lee, Seongnam-si, KR;

Si Sung Kim, Seoul, KR;

Hyung Seok Kim, Hwaseong-si, KR;

Dong Eon Lee, Hwaseong-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/84 (2025.01); H01L 25/16 (2023.01); H10H 20/01 (2025.01); H10H 20/824 (2025.01); H10H 20/831 (2025.01);
U.S. Cl.
CPC ...
H10H 20/84 (2025.01); H01L 25/167 (2013.01); H10H 20/831 (2025.01); H10H 20/0133 (2025.01); H10H 20/018 (2025.01); H10H 20/824 (2025.01);
Abstract

A light emitting element includes a light emitting element core extending in a direction and including first and second semiconductor layers and an element active layer disposed between the first and second semiconductor layers. The light emitting element includes an element electrode layer on the second semiconductor layer of the light emitting element core, and an element insulating film surrounding a side surface of the light emitting element core and a side surface of the element electrode layer. The element electrode layer overlaps the second semiconductor layer in the direction the light emitting element core extends, an area of the element electrode layer in plan view is smaller than an area of the second semiconductor layer in plan view, and the element insulating film completely exposes a surface of the element electrode layer, the surface being opposite to another surface of the element electrode layer facing the second semiconductor layer.


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