The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Jan. 18, 2023
Applicant:

Xiamen San'an Optoelectronics Co., Ltd., Fujian, CN;

Inventors:

Menghsin Yeh, Fujian, CN;

Zhousheng Jiang, Fujian, CN;

Bingyang Chen, Fujian, CN;

Chungying Chang, Fujian, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/812 (2025.01); H10H 20/825 (2025.01);
U.S. Cl.
CPC ...
H10H 20/812 (2025.01); H10H 20/825 (2025.01);
Abstract

An LED chip and a display device are disclosed in the disclosure. The LED chip structure includes a semiconductor stack layer. The semiconductor stack layer includes an N-type semiconductor layer, an active layer, and a P-type semiconductor layer. The active layer is disposed above the P-type semiconductor layer. The active layer includes multiple layers formed by repeatedly stacking a well layer and a quantum barrier layer. The P-type semiconductor layer is disposed above the active layer. The N-type peak doping concentration of at least two quantum barrier layers of the active layer is no greater than 4E17 atoms/cm.


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