The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Nov. 29, 2023
Tianjin Sanan Optoelectronics Co., Ltd., Tianjin, CN;
Xiufeng Xin, Tianjin, CN;
Minghui Song, Tianjin, CN;
Yuanyuan Wang, Tianjin, CN;
Hongwei Zhao, Tianjin, CN;
Wenjun Chen, Tianjin, CN;
TIANJIN SANAN OPTOELECTRONICS CO., LTD., Tianjin, CN;
Abstract
A photodiode includes a substrate, a device structure, a barrier ring region, a photosensitive region, an oxide ring, and an oxide layer. The substrate has a first surface and a second surface opposite to the first surface. The device structure includes an N-type doped region, a non-doped intrinsic layer, and a P-type doped region. The barrier ring region is disposed in the substrate at a periphery of an upper portion of the substrate and is spaced apart from the P-type doped region. The photosensitive region is located above the P-type doped region. The oxide ring is disposed on the substrate and surrounds the photosensitive region. The oxide layer is disposed between the oxide ring and the second surface. The P-type doped region includes a deep doped region and a shallow doped region that are adjacent to each other. A method for manufacturing the photodiode is also provided.