The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Oct. 14, 2022
Applicant:

Shanghai Tianma Microelectronics Co., Ltd., Shanghai, CN;

Inventors:

Yukun Huang, Shanghai, CN;

Linzhi Wang, Shanghai, CN;

Kerui XI, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10D 62/10 (2025.01); H10D 86/40 (2025.01);
U.S. Cl.
CPC ...
H10F 39/80377 (2025.01); H10D 62/10 (2025.01); H10D 86/427 (2025.01); H10F 39/80373 (2025.01);
Abstract

Provided are a transistor and a photoelectric sensor, the transistor includes a substrate and an active layer located on a side of the substrate; the active layer includes a source region, a drain region and a channel region located between the source region and the drain region, and in the channel region, the active layer includes a first active portion, a second active portion and a third active portion, the second active portion and the third active portion are respectively located on two opposite sides of the first active portion in a first direction, the second active portion is communicated with the source region in the active layer, and the third active portion is communicated with the drain region in the active layer.


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