The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Oct. 19, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Hyunpil Noh, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/8027 (2025.01); H10F 39/182 (2025.01); H10F 39/8023 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01);
Abstract

An image sensor may include; a semiconductor substrate including a first surface and a second surface, and further including a photoelectric conversion region, a buried gate structure disposed in a buried gate trench extending into the semiconductor substrate from the first surface of the semiconductor substrate, a floating diffusion region including a first type impurity and disposed on one side of the buried gate structure in the semiconductor substrate, a contact disposed on the first surface of the semiconductor substrate above the floating diffusion region, and a contact barrier region including a second type impurity and disposed between the contact and the floating diffusion region in the semiconductor substrate.


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