The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Jun. 30, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Eunsub Shim, Suwon-si, KR;

Wonseok Lee, Suwon-si, KR;

Haewook Jeong, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/18 (2025.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/18 (2025.01); H10F 39/802 (2025.01); H10F 39/811 (2025.01);
Abstract

An image sensor includes a first substrate layer, a second substrate layer that is thicker than the first substrate layer, an inter-substrate insulating layer arranged between the first substrate layer and the second substrate layer, a first impurity region, a pair of second impurity regions, and a third impurity region, which are spaced apart from each other and arranged on some portions of the first substrate layer. The image sensor further includes a photodiode region constituting a photo sensing device arranged on the second substrate layer, a transfer transistor including a first gate electrode layer that fills a gate hole, penetrates the first substrate layer and the inter-substrate insulating layer, and extends to the second substrate layer, and a floating diffusion region arranged on a side of the first substrate layer and connected to the transfer transistor.


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