The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Dec. 30, 2021
South China University of Technology, Guangzhou, CN;
Guoqiang Li, Guangzhou, CN;
Deqi Kong, Guangzhou, CN;
Wenliang Wang, Guangzhou, CN;
Liang Chen, Guangzhou, CN;
SOUTH CHINA UNIVERSITY OF TECHNOLOGY, Guangzhou, CN;
Abstract
A molybdenum diselenide (MoSe)/InGaN multispectral photoelectric detector includes a substrate, a buffer layer, an InGaN layer and a MoSelayer that are arranged sequentially from bottom to top. The MoSelayer partially covers the InGaN layer. The photoelectric detector further includes a barrier layer and an electrode layer. The barrier layer is provided on the InGaN layer not covered by the MoSelayer and on a part of the MoSelayer. The electrode layer is provided on the barrier layer and covers a part of an exposed portion of the MoSelayer. A preparation method of the detector is further provided. The detector detects red light and blue light at the same time. While realizing a sensitivity enhanced micro-nano structure on a surface of a detector chip, the detector improves quantum efficiency in blue and red bands, and enhances resonant absorption for the blue light and red light.